Development of Synchrotron Radiation X-Ray Grazing Incident Diffraction Method

JIANG XiaoMing; JIA QuanJie; ZHENG WenLi; LIU Peng; XIAN DingChang; JIANG ZuiMin; WANG Xun

Chinese Physics C> 2000, Vol. 24> Issue(12) : 1185-1190

Development of Synchrotron Radiation X-Ray Grazing Incident Diffraction Method

Institute of High Energy Physics, CAS, Beijing 100039, China1 Surface Physics National Key Lab., Fudan University, Shanghai 200433, China

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Abstract：
Synchrotron radiation X-ray grazing incident diffraction (GID) method was developed based on the five-circle diffractometer in the Diffuse Scattering Station at Beijing Synchrotron Radiation Facility. The lateral strain induced by the Ge/Si quantum dotswas measured successfully, which showed the capability of the GID method in measuring weak signals from surface structures. The results showed that the formation of Ge/Si quantum dots caused both the lateral expansion-strain and contraction-strain in the surface layer of Si(001) substrate.

References

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JIANG XiaoMing, JIA QuanJie, ZHENG WenLi, LIU Peng, XIAN DingChang, JIANG ZuiMin and WANG Xun. Development of Synchrotron Radiation X-Ray Grazing Incident Diffraction Method[J]. Chinese Physics C, 2000, 24(12): 1185-1190.

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Received: 1999-12-23
Revised: 1900-01-01

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通讯作者: 陈斌, [email protected]

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沈阳化工大学材料科学与工程学院沈阳 110142

Development of Synchrotron Radiation X-Ray Grazing Incident Diffraction Method

Corresponding author: JIANG XiaoMing,

Institute of High Energy Physics, CAS, Beijing 100039, China1 Surface Physics National Key Lab., Fudan University, Shanghai 200433, China

Received Date: 1999-12-23

Accepted Date: 1900-01-01

Available Online: 2000-12-05

Abstract: Synchrotron radiation X-ray grazing incident diffraction (GID) method was developed based on the five-circle diffractometer in the Diffuse Scattering Station at Beijing Synchrotron Radiation Facility. The lateral strain induced by the Ge/Si quantum dotswas measured successfully, which showed the capability of the GID method in measuring weak signals from surface structures. The results showed that the formation of Ge/Si quantum dots caused both the lateral expansion-strain and contraction-strain in the surface layer of Si(001) substrate.

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Development of Synchrotron Radiation X-Ray Grazing Incident Diffraction Method

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