Structure Fabrication of PI Film for GEM Detector

YI Fu-Ting; LUO Liang; ZHANG Ju-Fang; CHEN Yuan-Bai; XIE Yi-Gang; XIE Wan

Chinese Physics C> 2007, Vol. 31> Issue(10) : 929-932

Structure Fabrication of PI Film for GEM Detector

Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

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Abstract：
GEM, which has rapidly been developed in recent years as a new type of gas detector, has advantages of high position resolution and counting rate with a wide potential application in particle physics and X-ray imaging and etc. One of the key techniques of GEM's development is the structure fabrication of the PI film for the detector, which is difficult to be done by the lithography process. In this paper we present the structure fabrication process of GEM's PI film, and the result of our work about it. We chose wet-etching and dry-etching to make the structure holes of PI film, and find that wet-etching is better way to get perfect holes of GEM's PI film for future application with acceptable price. The successful fabrication of GEM's film structures is helpful to develop the domestic research of GEM detector. The performance of the GEM detector with such PI film still need more detail study.

References

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YI Fu-Ting, LUO Liang, ZHANG Ju-Fang, CHEN Yuan-Bai, XIE Yi-Gang and XIE Wan. Structure Fabrication of PI Film for GEM Detector[J]. Chinese Physics C, 2007, 31(10): 929-932.

YI Fu-Ting, LUO Liang, ZHANG Ju-Fang, CHEN Yuan-Bai, XIE Yi-Gang and XIE Wan. Structure Fabrication of PI Film for GEM Detector[J]. Chinese Physics C, 2007, 31(10): 929-932. shu

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Received: 2006-12-03
Revised: 2006-12-19

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通讯作者: 陈斌, [email protected]

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Structure Fabrication of PI Film for GEM Detector

Corresponding author: LUO Liang,

Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2006-12-03

Accepted Date: 2006-12-19

Available Online: 2007-10-05

Abstract: GEM, which has rapidly been developed in recent years as a new type of gas detector, has advantages of high position resolution and counting rate with a wide potential application in particle physics and X-ray imaging and etc. One of the key techniques of GEM's development is the structure fabrication of the PI film for the detector, which is difficult to be done by the lithography process. In this paper we present the structure fabrication process of GEM's PI film, and the result of our work about it. We chose wet-etching and dry-etching to make the structure holes of PI film, and find that wet-etching is better way to get perfect holes of GEM's PI film for future application with acceptable price. The successful fabrication of GEM's film structures is helpful to develop the domestic research of GEM detector. The performance of the GEM detector with such PI film still need more detail study.

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Structure Fabrication of PI Film for GEM Detector

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通讯作者: 陈斌, [email protected]

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