Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

SONG Ying-Hui; ZHANG Yu-Lin; WEI Qiang; KONG Xiang-Dong

Chinese Physics C> 2005, Vol. 29> Issue(12) : 1219-1224

Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

Institute of Electron Beam,Shandong University,Ji'nan 250061,China

Abstract
HTML
Reference
Related

PDF

Abstract：
The complex scattering process of the high-energy(50keV≤E₀≤100keV) electron beams with the Gaussian distribution in resist is simulated by Monte Carlo method with different energy range models. The backscatter coefficient of electrons and energy deposition distributions are presented under different exposure conditions. The simulation results are in good agreement with the experimental data. It is found that, in the energy range 50keV≤E₀≤100keV, higher electron beam energy, thinner resist and lower substrate's atom number will cause lower proximity effect, which agrees with the corresponding experiment. The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.

References

[1]

. REN Li-Ming. Study on Monte Carlo Simulation of Elec-tron Beamm Lithography and Proximity Effect Correc-tion Technique. Doctoral Thesis. Center of Microelectron-ics, The Chinese Academy of Science, 2002(in Chinese)(任黎明.电子束曝光的Monte Carlo模拟及邻近效应校正技术研究.博士论文.中国科学院微电子中心，2002)2. REN Li-Ming, CHEN Bao-Qin. Chinese Journal of Semi-conductors, 2001, 22(12): 1519(in Chinese)(任黎明，陈宝钦.半导体学报，2001, 22(12): 1519)3. TAN Zhen-Yu, He Yan-Cai. Chinese Journal of Computa-tional Physics, 2000, 17(3): 331-336(in Chinese)(谭震宇，何延才，计算物理，2000, 17(3): 331-336)4. Kenji Murata, David F Kyser, Chiu H. Ting. J. Appl.Phys., 1981, 52(7): 43965. Ivin V V, Silakov M V, Babushkin G A et al. Micro-electeonic Engineering, 2003, 69: 5946. Pandey L N, Rustgi M L. J. Appl. Phys., 1989, 66(12):60597. LIU Ming, CHEN Bao-Qin, ZHANG Jian-Hong et al. Mi-crofabrication Technology, 2000 (1): 16(in Chinese)(刘明，陈宝钦，张建宏等.微细加上技术，2000 (1): 16)8. Chang T H P. J. Vac. Sci. Technol, 1975, 12(6): 12719. Murata K, Kawata H, Nagami K et al. J. Vac. Sci. Technol.,1987, B5(1): 12410. Adesida, Shimizu R, Everhart T E. J. Appl. Phys., 1980,51(11): 506211. Joy D C, Lou S. Scanning, 1989, 11(4): 17612. REN Li-Ming, CHEN Bao-Qin. Microfabrication Technol-ogy, 2001 (3): 60(in Chinese)(任黎明，陈宝钦.微细加上技术，2001 (3): 60)13. REN Li-Ming, CHEN Bao-Qin, TAN Zhen-Yu et al. Opto-Electronic Engineering, 2002, 29(3): 24(in Chinese)(任黎明，陈宝钦，谭震宇等.光电工程，2002, 29(3): 24)14. Reimer L, Krefting E R. National Bureau of Standards Spe-cial Publication, 1976, 460: 45

[1]	PANG Cheng-Guo , SU You-Wu , WANG Wen-Jun , LUO Xiao-Ming , XU Jun-Ku , LI Wu-Yuan , YUAN Jiao , YAO Ze-En . Monte Carlo simulation of carbon ion radiotherapy for the human eye. Chinese Physics C, 2015, 39(1): 018201. doi: 10.1088/1674-1137/39/1/018201
[2]	REN Zhong-Zhou , LIN Qi-Hu , . Diffusion Monte Carlo calculations ofthree-body systems. Chinese Physics C, 2012, 36(11): 1065-1068. doi: 10.1088/1674-1137/36/11/005
[3]	Carloni Calame . Status and accuracy of the Monte Carlo generators for luminosity measurements. Chinese Physics C, 2010, 34(6): 883-888. doi: 10.1088/1674-1137/34/6/045
[4]	XU Qing-Jun . News on PHOTOS Monte Carlo: γ^*→π⁺π^－(γ) and K^±→π⁺π^－e^±ν(γ). Chinese Physics C, 2010, 34(6): 889-895. doi: 10.1088/1674-1137/34/6/046
[5]	ZHANG Yu-Chun , LI Yu-Xiao , LI Jia-Cai , YU Chun-Xu , CHEN Peng , WU Yuan-Ming , NIU Wei-Ping , ZHANG Shao-Ping . Monte Carlo study for γ+N→π+N at a new compound target. Chinese Physics C, 2008, 32(12): 952-956. doi: 10.1088/1674-1137/32/12/003
[6]	MENG Xiang-Wei . Effective Temperature Calculation and Monte Carlo Simulation of Temperature Effect on Muon Flux. Chinese Physics C, 2004, 28(2): 110-115.
[7]	LI Cheng-Bo , YUAN Jian , LIN Er-Kang , ZHANG Pei-Hua , MENG Qiu-Ying . Monte-Carlo Simulation and Analysis of the Spectrum of p+¹¹B Three-Body Sequential Decay. Chinese Physics C, 2002, 26(12): 1223-1227.
[8]	WEN Wan-Xin , JIN Gen-Ming . Monte Carlo Simulations for Optimum Design of Composite Detectors for High Energy γ Ray. Chinese Physics C, 2002, 26(12): 1291-1296.
[9]	TIAN Ding , BIAN Jian-Guo , CHEN Guo-Ming , CHEN He-Sheng . Monte Carlo Simulation of Barrel Shower Counter of BESⅢ for Better Design. Chinese Physics C, 2001, 25(12): 1213-1218.
[10]	QU Ruo-Fei , HE Hui-Hai , ZHU Qing-Qi , CHA Min , LU Hong , JING Cai-Liu , WANG Huan-Yu . Monte Carlo Simulation of 50m² RPC Carpet at Yang Ba Jing. Chinese Physics C, 2001, 25(5): 371-376.
[11]	Yao Xiaoxia , Zhao Weiqin , Pang Yang . Monte Carlo Simulation of J/ψ Suppression Based on GCP Code. Chinese Physics C, 1999, 23(6): 536-545.
[12]	Hu Jingguo . Monte-Carlo Simulation on Asymmetric Lattices for SU(2) Gauge Field Thermodynamics. Chinese Physics C, 1997, 21(9): 801-805.
[13]	Li Jin , Li Yushan , Qi Nading , Xue Shengtian , Wang Ping , Hu Tao , Ma Donghong , Zhang Jiawen , Zhu Qiming , Jiang Chunhua , Jiang Zhijin . Monte Carlo Study on the Strategy of Tau Mass Measurement. Chinese Physics C, 1995, 19(S2): 115-123.
[14]	Luo Guangxuan , Tan Youheng , Zhang Chunsheng , Dong Yuju , Yuan Peng , Zhang Huimin , Wang Hui , Yuan Yukui , Li Jing . Monte-Carlo Investigation on the Performance of Huairou EAS Array. Chinese Physics C, 1995, 19(10): 884-890.
[15]	Li Jin , Li Yushan , Qi Nading , Xue Shengtian , Wang Ping , Hu Tao , Ma Donghong , Zhang Jiawen , Zhu Qiming , Jiang Chunhua , Jiang Zhijing . Monte Carlo study for strategies of Tau mass measurement. Chinese Physics C, 1995, 19(3): 209-216.
[16]	Wang Qun , Xie Qubing , Chen Esheng . Monte-Carlo Simulations of Process e⁺e^－→qq-h's Under Unsaturated Model. Chinese Physics C, 1994, 18(10): 902-910.
[17]	YU Lian-Zhi , LIU Lian-Shou , CAI Xu . Monte Carlo Investigation of Fractal Structure of Multiparticle Production in High Energy Collision. Chinese Physics C, 1992, 16(7): 633-639.
[18]	ZHU Zheng-Kun , ZHANG Xiao-Ze , JIN Xing-Nan , SA Ben-Hao . IMPROVEMENT OF THERMODYNAMICAL MONTE CARLO SIMULATION IN SU(2) PURE GAUGE FIELD THEORY ——AN APPROACH TO CONTINUUM PHYSICS LIMIT. Chinese Physics C, 1989, 13(4): 339-345.
[19]	BAO Jing-Dong , ZHU Yi-Zhong . CALCULATION OF THE KINETIC-ENERGY DISTRIBUTIONS OF FISSION-FRAGMENTS FROM MONTE-CARLO SIMULATION TO THE FOUR-DIMENSIONAL LANGEVIN EQUATION. Chinese Physics C, 1989, 13(11): 1023-1031.
[20]	LI Wen-Zhu , YING He-Ping , DONG Shao-Jing . MONTE CARLO SIMULATION OF SU(2)×SU(2) SPIN SYSTEM ON 2-DIMENSIONAL RANDOM LATTICE. Chinese Physics C, 1987, 11(2): 186-191.

Access

Get Citation

SONG Ying-Hui, ZHANG Yu-Lin, WEI Qiang and KONG Xiang-Dong. Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist[J]. Chinese Physics C, 2005, 29(12): 1219-1224.

SONG Ying-Hui, ZHANG Yu-Lin, WEI Qiang and KONG Xiang-Dong. Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist[J]. Chinese Physics C, 2005, 29(12): 1219-1224. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2005-01-04
Revised: 1900-01-01

Article Metric

Article Views(3184)
PDF Downloads(738)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, [email protected]

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

Corresponding author: SONG Ying-Hui,

Institute of Electron Beam,Shandong University,Ji'nan 250061,China

Received Date: 2005-01-04

Accepted Date: 1900-01-01

Available Online: 2005-12-05

Abstract: The complex scattering process of the high-energy(50keV≤E₀≤100keV) electron beams with the Gaussian distribution in resist is simulated by Monte Carlo method with different energy range models. The backscatter coefficient of electrons and energy deposition distributions are presented under different exposure conditions. The simulation results are in good agreement with the experimental data. It is found that, in the energy range 50keV≤E₀≤100keV, higher electron beam energy, thinner resist and lower substrate's atom number will cause lower proximity effect, which agrees with the corresponding experiment. The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.

HTML

Reference (1)

Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, [email protected]

Email This Article