MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO<SUB>2</SUB> Matrix

CHEN Dong-Liang; WU Zi-Yu; WEI Shi-Qiang

Chinese Physics C> 2006, Vol. 30> Issue(5) : 476-480

MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂ Matrix

Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

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Abstract：
The interface effect of semiconductor InSb nanoparticles (NPs) embedded in a-SiO₂ matrix was investigated via multi-scattering XANES simulations. The results show that the white line increase and broadening to higher energies of InSb NPs embedded in a-SiO₂ host matrix are mainly due to the interaction of InSb NPs and a-SiO₂ matrix.It can be interpreted as both a local single-site effect on μ₀(E) due to the effect of a-SiO₂ matrix on Sb intra-atomic potential and the increase in 5p-hole population due to 5p-electron depletion in Sb for the InSb NPs embedded in SiO₂ matrix. On the other hand, our result reveals evidently that it is not reasonable to estimate the 5p-hole counts only according to the intensity of the white line due to the interface effect of nanoparticles.

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CHEN Dong-Liang, WU Zi-Yu and WEI Shi-Qiang. MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂ Matrix[J]. Chinese Physics C, 2006, 30(5): 476-480.

CHEN Dong-Liang, WU Zi-Yu and WEI Shi-Qiang. MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂ Matrix[J]. Chinese Physics C, 2006, 30(5): 476-480. shu

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Received: 2005-08-22
Revised: 2005-10-11

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通讯作者: 陈斌, [email protected]

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沈阳化工大学材料科学与工程学院沈阳 110142

MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂ Matrix

Corresponding author: CHEN Dong-Liang,

Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

Received Date: 2005-08-22

Accepted Date: 2005-10-11

Available Online: 2006-05-05

Abstract: The interface effect of semiconductor InSb nanoparticles (NPs) embedded in a-SiO₂ matrix was investigated via multi-scattering XANES simulations. The results show that the white line increase and broadening to higher energies of InSb NPs embedded in a-SiO₂ host matrix are mainly due to the interaction of InSb NPs and a-SiO₂ matrix.It can be interpreted as both a local single-site effect on μ₀(E) due to the effect of a-SiO₂ matrix on Sb intra-atomic potential and the increase in 5p-hole population due to 5p-electron depletion in Sb for the InSb NPs embedded in SiO₂ matrix. On the other hand, our result reveals evidently that it is not reasonable to estimate the 5p-hole counts only according to the intensity of the white line due to the interface effect of nanoparticles.

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MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂ Matrix

MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂ Matrix