Multiplicity Distribution of Charged Particles Produced in pp Collisions at 400 GeY/<i>c</i>

Wang Shaoshun; Zhang Jie; Xiao Chenguo; Ye Yunxiu; Shi Guoshun; Fang Rong; Yang Jie

Chinese Physics C> 1989, Vol. 13> Issue(S3) : 231-238

Multiplicity Distribution of Charged Particles Produced in pp Collisions at 400 GeY/c

Department of Modem Physics, University of Science and Technology of China, Hefei

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Charged particle multiplicity distributions in pp collisions at 400 GeV/c have been studied by using the LEBC films offered by CERN NA27 Collaboration. The corrections to the raw data are described. The results are compared with data at other energies. It shows that up to ISR energy the charged particle multiplicity distribution has KNO scaling behavior for non-single diffractive process, whereas for the inelastic process the distribution shows a deviation from KNO scaling.

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Wang Shaoshun, Zhang Jie, Xiao Chenguo, Ye Yunxiu, Shi Guoshun, Fang Rong and Yang Jie. Multiplicity Distribution of Charged Particles Produced in pp Collisions at 400 GeY/c[J]. Chinese Physics C, 1989, 13(S3): 231-238.

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Received: 1988-12-29

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Supported by the National Natural Science Foundation of China.

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沈阳化工大学材料科学与工程学院沈阳 110142

Multiplicity Distribution of Charged Particles Produced in pp Collisions at 400 GeY/c

Department of Modem Physics, University of Science and Technology of China, Hefei

Received Date: 1988-12-29

Fund Project: Supported by the National Natural Science Foundation of China.

Abstract: Charged particle multiplicity distributions in pp collisions at 400 GeV/c have been studied by using the LEBC films offered by CERN NA27 Collaboration. The corrections to the raw data are described. The results are compared with data at other energies. It shows that up to ISR energy the charged particle multiplicity distribution has KNO scaling behavior for non-single diffractive process, whereas for the inelastic process the distribution shows a deviation from KNO scaling.

Multiplicity Distribution of Charged Particles Produced in pp Collisions at 400 GeY/c

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通讯作者: 陈斌, [email protected]

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