Experimental Study of X-Ray Induced Dose Enhancement Effect Using Synchrotron Radiation

GUO Hong-Xia; CHEN Yu-Sheng; ZHANG Yi-Men; ZHOU Hui; HAN Fu-Bin; GUAN Ying; GONG Jian-Chen

Chinese Physics C> 2001, Vol. 25> Issue(S1) : 1-6

Experimental Study of X-Ray Induced Dose Enhancement Effect Using Synchrotron Radiation

Northwest Institute of Nuclear Technology,Xi'an 710024,China2 Microelectronics Institute of Xidian University,Xi'an 710071,China

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Abstract：
A multiple parallel plate Aluminum ionization chamber has been designed.Using the ionization chamber the measurement dose gradient distribution at and near the interface of Kovar/Au/Al,Pb/Al,Ta/Al has been done for 30—100keV Beijing synchrotron radiation facility x-rays and DEF(Dose Enhancement Factor)are provided.Complementary metal-oxide semiconductor (CMOS) 4069 devices are irradiated by hard x-rays in BSRF with emphasis on the relative dose-enhancement factor.Using Bi-laminate structure,the equivalent relation of total dose damage is setup by comparing the response of devices,damage enhancement factor of the device is provided.These methods are provided for X-rays radiation hardening technology as an effective evaluation approach.

References

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Chadsey W L. X-ray dose Enhancement. Vol. I. Summary Report, RAMS-TR-76-159,ADAC262482 LA1 Z W et al. Radiation Hardening Electronics-Radiation Effects and Hardening Techniques, 1998(in Chinese)(赖祖武等,抗辐射电子学一辐射效应及加固原理.国防工业出版社，1998)3 LONG D M, Millward D G. IEEE Trans. Nuc.Sci., 1982, NS29:19804 Simons M. IEEE Trans. Nuc.Sci., 1997, NS-44:20525 Beutlter D E. IEEE Trans. Nuc.Sci., 1987, NS-MI5446 Solin J R. IEEE Trans. Nuc.Sci., 2000, NS-47324477 Garth J C. IEEE Trans. Nuc.Sci., 1986, NS-33:12668 MA T P Ionizing Radiation Effects in MOS Devices and Circuits. Printed in the United States of America, 1989

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GUO Hong-Xia, CHEN Yu-Sheng, ZHANG Yi-Men, ZHOU Hui, HAN Fu-Bin, GUAN Ying and GONG Jian-Chen. Experimental Study of X-Ray Induced Dose Enhancement Effect Using Synchrotron Radiation[J]. Chinese Physics C, 2001, 25(S1): 1-6.

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Received: 1900-01-01
Revised: 1900-01-01

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通讯作者: 陈斌, [email protected]

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沈阳化工大学材料科学与工程学院沈阳 110142

Experimental Study of X-Ray Induced Dose Enhancement Effect Using Synchrotron Radiation

Corresponding author: GUO Hong-Xia,

Northwest Institute of Nuclear Technology,Xi'an 710024,China2 Microelectronics Institute of Xidian University,Xi'an 710071,China

Received Date: 1900-01-01

Accepted Date: 1900-01-01

Available Online: 2001-06-22

Abstract: A multiple parallel plate Aluminum ionization chamber has been designed.Using the ionization chamber the measurement dose gradient distribution at and near the interface of Kovar/Au/Al,Pb/Al,Ta/Al has been done for 30—100keV Beijing synchrotron radiation facility x-rays and DEF(Dose Enhancement Factor)are provided.Complementary metal-oxide semiconductor (CMOS) 4069 devices are irradiated by hard x-rays in BSRF with emphasis on the relative dose-enhancement factor.Using Bi-laminate structure,the equivalent relation of total dose damage is setup by comparing the response of devices,damage enhancement factor of the device is provided.These methods are provided for X-rays radiation hardening technology as an effective evaluation approach.

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Experimental Study of X-Ray Induced Dose Enhancement Effect Using Synchrotron Radiation

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