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2024年10月30日

Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations

  • Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0×1017 or 1.2×1018 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×1011, 1.0×1012, 5.0×1012 ions/cm2, or with 308 MeV Xe-ions to 1.0×1012, 1.0×1013, 1.0×1014 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO2 under swift heavy ion irradiations was briefly discussed.
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  • [1] Zacharias M, Christen J, Basing J et al. J. Non-Cryst. Soli., 1996, 115: 1982 WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods B, 2002, 193: 6853 YU Y H, WONG S P, Wilson I H. Phys. Stat. Sol. A, 1998, 168: 5314 Pérez-Rodríguez A, Gozález-Varona O, Garrido B et al. J. Appl. Phys., 2003, 94: 2545 Garrido B, López M, FerréS et al. Nucl. Instrum. Methods B, 1996, 120: 1016 ZHAO J, MAO D S, LIN Z X et al. Appl. Phys. Lett., 1998, 73: 18387 WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods B, 2003, 209: 2008 WANG Z G, ZHAO Z M, Benyagoub A et al. Nucl. Instrum. Methods B, 2007, 256: 2889 Neri F, Trusso S, Vasi C et al. Thin Solid Films, 1998, 332: 29010 Moura C, Cunha L, Hórfo et al. Surf. Coat. Tech., 2003, 174-175: 32411 Dimitrov D B, Papadimitriou D, Beshkov G. Diam. Relat. Mater., 1999, 8: 114812 HU Z H, LIAO X B, DIAO H W et al. J. Cryst. Growth, 2004, 264: 713 Veresa M, Koósa T M, Tóth S et al. Diam. Relat. Mater., 2005, 14: 105114 Beeman D, Silverman J, Lynds R et al. Phys. Rev. B, 1984, 30: 87015 Dillon R O, Woollam J A. Phys. Rev. B, 1984, 29(6): 348216 Ferrari A C, Rodil S E, Robertson J. Phys. Rev. B, 2003, 67: 15530617 Ferrari A C, Robertson J. Phys. Rev. B, 2000, 61: 1409518 LIU C B, WANG Z G , ZANG H et al. Chinese Physics C (HEP NP), 2008, 32(S2): 251
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LIU Chun-Bao and WANG Zhi-Guang. Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations[J]. Chinese Physics C, 2011, 35(9): 885-889. doi: 10.1088/1674-1137/35/9/019
LIU Chun-Bao and WANG Zhi-Guang. Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations[J]. Chinese Physics C, 2011, 35(9): 885-889.  doi: 10.1088/1674-1137/35/9/019 shu
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Received: 2011-02-12
Revised: 2011-02-02
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Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations

    Corresponding author: LIU Chun-Bao,
    Corresponding author: WANG Zhi-Guang,

Abstract: Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0×1017 or 1.2×1018 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×1011, 1.0×1012, 5.0×1012 ions/cm2, or with 308 MeV Xe-ions to 1.0×1012, 1.0×1013, 1.0×1014 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO2 under swift heavy ion irradiations was briefly discussed.

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