A comparison of ionizing radiation damage in CMOS devices from <SUP>60</SUP>Co gamma rays, electrons and protons

HE Bao-Ping; YAO Zhi-Bin; ZHANG Feng-Qi

doi:10.1088/1674-1137/33/6/006

Chinese Physics C> 2009, Vol. 33> Issue(6) : 436-439 DOI: 10.1088/1674-1137/33/6/006

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

Abstract
HTML
Reference
Related

PDF

Abstract：
Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ⁶⁰Co gamma rays, 1 MeV electrons and 1—9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays are equal to that of 1 MeV electron and 1—7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of ⁶⁰Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.

References

[1]

. ZHANG Ting-Qing, LIU Jia-Lu, LI Jian-Jun et al. Acta Physica Sinica, 1999, 48(12): 2299-2303 (in Chinese)2. FAN Long, REN Di-Yuan, ZHANG Guo-Qiang et al. Chi-nese Journal of Semiconductors, 2000, 21(4): 383-387 (inChinese)3. HE Bao-Ping, WANG Gui-Zhen, ZHOU Hui et al. Acta Physica Sinica, 2003, 52(1): 188-191 (in Chinese)4. HE Bao-Ping, WANG Gui-Zhen, GONG Jian-Chen et al.Acta Physica Sinica, 2003, 52(9): 2239-2243(in Chinese)5. Stassinopoulos E G, Brucker G J, Gunten O Van et al.IEEE Trans. Nucl. Sci., 1984, 31(6): 1444-14476. Tallon R W, Ackerman M R, KempW T et al. IEEE Trans.Nucl. Sci., 1985, 32(6): 4393-43987. Brucker G J, Van Gunten O, Stassinopoulos E G et al.IEEE Trans. Nucl. Sci., 1983, 30(6): 4157-4161

[1]	Rajnikant Makwana , S. Mukherjee , Jian-Song Wang , Zhi-Qiang Chen . New empirical formula for (γ, n) reaction cross section near GDR peak for elements with Z≥60. Chinese Physics C, 2017, 41(4): 044105. doi: 10.1088/1674-1137/41/4/044105
[2]	Jian-Guo Qin , Cai-Feng Lai , Li Jiang , Rong Liu , Xin-Wei Zhang , Bang-Jiao Ye , Tong-Hua Zhu . Method for measuring prompt γ-rays generated by D-T neutrons bombarding a depleted uranium spherical shell. Chinese Physics C, 2016, 40(1): 014001. doi: 10.1088/1674-1137/40/1/014001
[3]	Cai-Xun Zhang , Shin-Ted Lin , Jian-Ling Zhao , Xun-Zhen Yu , Li Wang , Jing-Jun Zhu , Hao-Yang Xing . Discrimination of neutrons and γ-rays in liquid scintillator based on Elman neural network. Chinese Physics C, 2016, 40(8): 086204. doi: 10.1088/1674-1137/40/8/086204
[4]	Chao Jin , Yi-Qing Guo , Hong-Bo Hu . Spatial dependent diffusion of cosmic rays and the excess of primary electrons derived from high precision measurements by AMS-02. Chinese Physics C, 2016, 40(1): 015101. doi: 10.1088/1674-1137/40/1/015101
[5]	WANG Yan-Ping , LUO Yin-Hong , WANG Wei , ZHANG Ke-Ying , GUO Hong-Xia , GUO Xiao-Qiang , WANG Yuan-Ming . ⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices. Chinese Physics C, 2013, 37(5): 056201. doi: 10.1088/1674-1137/37/5/056201
[6]	LI Xiao-Ping , PEI Guo-Xi , PEI Shi-Lun . Simulation studies on the polarized positron generation from circularly polarized gamma-rays. Chinese Physics C, 2012, 36(10): 1009-1012. doi: 10.1088/1674-1137/36/10/017
[7]	TANG Zhi-Cheng , YUAN Qiang , BI Xiao-Jun , CHEN Guo-Ming . On the detectability of Galactic dark matter annihilation into monochromatic gamma-rays. Chinese Physics C, 2011, 35(8): 725-734. doi: 10.1088/1674-1137/35/8/006
[8]	LI Xiao-Ping , PEI Guo-Xi . Experiment studies on the polarized gamma-rays generation at KEK-ATF. Chinese Physics C, 2009, 33(8): 691-695. doi: 10.1088/1674-1137/33/8/018
[9]	CHEN Ming-Zhi , HE Jian-Hua . Investigation of a method to calculate spontaneous radiation spectrafrom relativistic electrons in undulators. Chinese Physics C, 2009, 33(1): 58-64. doi: 10.1088/1674-1137/33/1/013
[10]	ZHU Jie , MA Hong-Guang , MA Wen-Yan , ZENG Hui , WANG Zhao-Min , XU Zi-Zhong . Comparison of two position sensitive gamma-ray detectors based on continuous YAP and pixellated NaI(TI) for nuclear medical imaging applications. Chinese Physics C, 2008, 32(11): 934-938. doi: 10.1088/1674-1137/32/11/018
[11]	MENG Xiang-Ti , HUANG Qiang , MA Yan-Xiu , ZHENG Yong-Nan , FAN Ping , ZHU Sheng-Yun . A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation. Chinese Physics C, 2008, 32(6): 442-445. doi: 10.1088/1674-1137/32/6/006
[12]	LUO Yin-Hong , GONG Jian-Cheng , ZHANG Feng-Qi , GUO Hong-Xia , YAO Zhi-Bin , LI Yong-Hong , GUO Ning . Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment. Chinese Physics C, 2006, 30(1): 79-83.
[13]	Zhang Tianbao , Wang Shuying , Wang Haidong , Shen Zhiqi , Meng Bonian . Precise Measurement of Gamma Ray Energies with HPGe Spectrometer by Slithering Comparison Method. Chinese Physics C, 1993, 17(S1): 25-31.
[14]	Mao Huishun , Wang Guoliang , Liu Nianzong , Zhang Ge , Zhang Zhuxiang , Zhang Liangsheng , Zhang Caidi , Zheng Linsheng , Zhou Yongshen , Hu Lidong , Zhao Xiaojian , Zhong Xuechu , Tan Yiping , Han Shiwen , D. Green , A. Para , K. Johnson . Study of Radiation Damage of a Tile/Fiber Scintillator Calorimeter. Chinese Physics C, 1992, 16(S4): 376-384.
[15]	Zhang Tianbao , Wang Haidong , Shen Zhiqi . Measurement of the Radiation Energy in Parapositronium Two Gamma Annihilation. Chinese Physics C, 1991, 15(S3): 227-234.
[16]	Wang Yongchang , Yuan Junqian , Ren Zhongliang , Wang Huamin , Yang Jingkang , Shui Yongqing , Xiang Sicang . Cross Section Measurement of the ⁶³Cu(n,α)⁶⁰Co Reaction. Chinese Physics C, 1991, 15(S1): 73-77.
[17]	Zhu Guoyi , He Jingtang , Gu Yifan , Qian Zhongmin , Chu Guozhu . Study on Radiation Damage of Chinese-made High-Z Scintillation Crystals. Chinese Physics C, 1990, 14(S2): 115-124.
[18]	WANG Yong-Chang , REN Zhong-Liang , YUAN Jun-Qian , YANG Jing-Kang , XIANG Si-Cang . THE CROSS SECTION MEASUREMENT FOR THE ⁶⁰Ni(n,p)⁶⁰Co REACTION. Chinese Physics C, 1990, 14(10): 923-926.
[19]	WANG Yong-Chang , YUAN Jun-Qian , REN Zhong-Liang , WANG Hua-Min , YANG Jing-Kang , SHUI Yong-Qing , XIANG Si-Cang . THE CROSS SECTION MEASUREMENT FOR THE ⁶³Cu(n,α)⁶⁰Co REACTION. Chinese Physics C, 1990, 14(10): 919-922.
[20]	Zhou Hongyu , Yan Yiming , Fan Guoying , Lan Liqiao , Wang Qi , Sun Shuxu , Hua Ming , Han Chongzhan , Liu Shuzhen , Rong Yaning , Wen Shenlin , Wang Xinfu , Yan Hua , Wang Wanhong , Tang Lin . Study of Associated Gamma Rays from Niobium under 14,9 MeV Neutron Bombardments. Chinese Physics C, 1989, 13(S1): 97-108.

Access

Get Citation

HE Bao-Ping, YAO Zhi-Bin and ZHANG Feng-Qi. A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons[J]. Chinese Physics C, 2009, 33(6): 436-439. doi: 10.1088/1674-1137/33/6/006

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2008-09-17
Revised: 2008-11-28

Article Metric

Article Views(2762)
PDF Downloads(613)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, [email protected]

1.
沈阳化工大学材料科学与工程学院沈阳 110142

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

Corresponding author: HE Bao-Ping,

Received Date: 2008-09-17

Accepted Date: 2008-11-28

Available Online: 2009-06-05

Abstract: Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ⁶⁰Co gamma rays, 1 MeV electrons and 1—9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays are equal to that of 1 MeV electron and 1—7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (ΔV_th) generated by ⁶⁰Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of ⁶⁰Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.

HTML

Reference (1)

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, [email protected]

Email This Article

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

Corresponding author: HE Bao-Ping,

HTML

目录

A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, [email protected]

Email This Article

A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons

Corresponding author: HE Bao-Ping,

HTML

目录

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons

A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons