Identification of pore size in porous SiO<SUB>2</SUB> thin film by positron annihilation

ZHANG Zhe; QIN Xiu-Bo; WANG Dan-Ni; YU Run-Sheng; WANG Qiao-Zhan; MA Yan-Yun; WANG Bao-Yi

doi:10.1088/1674-1137/33/2/015

Chinese Physics C> 2009, Vol. 33> Issue(2) : 156-160 DOI: 10.1088/1674-1137/33/2/015

Identification of pore size in porous SiO₂ thin film by positron annihilation

Abstract
HTML
Reference
Related

PDF

Abstract：
Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO₂ thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75:25 at.-% (Al75Si25) target with the radiofrequency (RF) power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the Al cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO₂ on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO₂ thin film is τ=7.80 ns. With these values of lifetime, RTE (Rectangular Pore Extension) model has been used to analyze the pore size.

References

[1]

Dresselhaus M S, LIN Y M, Rabin Q, Jorio A et al. Mater.Sci. Eng. C, 2003, 23: 1292 Nielsch K, Wehrspohn R B, Barthel J et al. Appl. Phys.Lett., 2001, 79: 13603 LIN Y M, SUN X, Dresselhaus M S. Phys. Rev. B, 2000,62: 46104 Misheva M, Djourelov N, Margaca F M A et al. Journal of Non-Crystalline Solids, 2001, 279: 196-2035 Jean Y C, Mallon P E, Schrader D M. Principles and Ap-plications of Positron Positronium Chemistry, Singapore:World Scientic Publishing, 2003. 253-2776 Zerda T W, Hoang G, Miller B et al. Mat. Res. Soc. Symp. Proc., 1988, 121: 6537 Dull T L, Frieze W E, Gidley D W et al. J. Phys. Chem. B, 2001, 105: 4657-46628 TAO S J. J. Chem. Phys., 1972, 56: 54999 Eldrup, Lightbody M, Sherwood D. J. N. Chem. Phys.,1982, 63: 5110 Fukutani K, Tanji K, Motoi T et al. Adv. Mater., 2004, 16:1611 Heuer H, Hugenschmidt C, Wider T et al. Applied Surface Science, 1999, 149: 49-5312 Pi X D, Coleman P G, Harding R, Davies G, Gwilliam R M, Sealy B J. Physica B, 2003, 340-342: 1094-109813 Gidley D W, Frieze W E, Dull T L et al. Phys. Rev. B, 1999, 60: R515714 HUANG Ming-Cheng, Lue J T, Yeh C K. Solid State Com-munications, 1979, 32(12): 1169-1172

[1]	GAO Bing-Shui , ZHOU Xiao-Hong , FANG Yong-De , ZHANG Yu-Hu , LIU Min-Liang , WANG Si-Cheng , WANG Jian-Guo , MA Fei , GUO Ying-Xiang , WU Xiao-Guang , HE Chuang-Ye , ZHENG Yun , WANG Zhi-Min , YAN Xin-Liang , WANG Zhi-Gang , FANG Fang . Identification of a 9/2^-[505] isomer in the neutron-rich ¹⁹³Os nucleus. Chinese Physics C, 2014, 38(6): 064001. doi: 10.1088/1674-1137/38/6/064001
[2]	AN Ran , CHEN Bin , LIU Yan-Fen , YE Bang-Jiao , KONG Wei , Stefan Ritt . A new positron annihilation lifetime spectrometer based on DRS4 waveform digitizing board. Chinese Physics C, 2014, 38(5): 056001. doi: 10.1088/1674-1137/38/5/056001
[3]	DENG Wen , SUN Xiao-Xiang , TAN Shao-Xi , LI Yu-Xia , XIONG Ding-Kang , HUANG Yu-Yang . Defects and hyperfine interactions in binary Fe-Al alloys studied by positron annihilation and Mössbauer spectroscopies. Chinese Physics C, 2013, 37(12): 128201. doi: 10.1088/1674-1137/37/12/128201
[4]	LIU Jun-Hui , LI Dao-Wu , ZHANG Zhi-Ming , WANG Bao-Yi , ZHANG Tian-Bao , HAO Jia , WEI Long . Using a LaBr₃:Ce scintillator for positron annihilation lifetime spectroscopy. Chinese Physics C, 2012, 36(4): 380-383. doi: 10.1088/1674-1137/36/4/016
[5]	LIU Chun-Bao , WANG Zhi-Guang . Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations. Chinese Physics C, 2011, 35(9): 885-889. doi: 10.1088/1674-1137/35/9/019
[6]	BAI Sha , GAO Jie . Simulation of beam size multiknobs correction at the Accelerator Test Facility 2 at KEK. Chinese Physics C, 2011, 35(4): 397-401. doi: 10.1088/1674-1137/35/4/014
[7]	LI Dao-Wu , LIU Jun-Hui , ZHANG Zhi-Ming , WANG Bao-Yi , ZHANG Tian-Bao , WEI Long . A compact positron annihilation lifetime spectrometer. Chinese Physics C, 2011, 35(1): 100-103. doi: 10.1088/1674-1137/35/1/021
[8]	J. H. Kühn . Strong coupling, charm- and bottom-quark masses from electron-positron annihilation. Chinese Physics C, 2010, 34(6): 675-679. doi: 10.1088/1674-1137/34/6/011
[9]	WANG Dan-Ni , ZHANG Lan-Zhi , WANG Bao-Yi , YU Run-Sheng , ZHANG Zhi-Ming , LI Dao-Wu , WEI Long . Positronium annihilation in silica aerogel studied by a positron age-momentum correlation technique. Chinese Physics C, 2009, 33(1): 81-84. doi: 10.1088/1674-1137/33/1/017
[10]	DENG Ju-Zhi , CHEN Rong , SEKIGUCHI Tetsuhiro , BABA Yuji , HIRAO Norie , HONDA Mitsunori . Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate. Chinese Physics C, 2008, 32(9): 769-772. doi: 10.1088/1674-1137/32/9/018
[11]	LIU Chun-Bao , WANG Zhi-Guang , ZANG Hang , WEI Kong-Fang , YAO Cun-Feng , SHENG Yan-Bin , MA Yi-Zhun , A Benyagoub , M Toulemonde , JIN Yun-Fan . Investigation of PL properties of C-doped SiO₂/Si samples after high energy Pb ion irradiation. Chinese Physics C, 2008, 32(S2): 251-254.
[12]	ZHOU Chun-Lan , ZHANG Tian-Bao , MA Chuang-Xing , ZHANG Zhi-Ming , CAO Xing-Zhong , WANG Bao-Yi , WEI Long . The Analysis of 3γ/2γ in the Measurement of Positron Annihilation Doppler-broadening Spectroscopy. Chinese Physics C, 2006, 30(1): 84-87.
[13]	CHEN Dong-Liang , WU Zi-Yu , WEI Shi-Qiang . MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO₂ Matrix. Chinese Physics C, 2006, 30(5): 476-480.
[14]	HUA Wei , LI Zhi-Hong , WU Zi-Yu , WU Zong-Hua , HUANG Yu-Ying . The conformational changes of encapsulated cytochrome c in SiO2 sol-gel materials. Chinese Physics C, 2005, 29(S1): 12-15.
[15]	XIAO Wan-Sheng , LI YAN , LIU Jing , WENG Ke-Nan , XIE Hong-Sen . Transformations of Amorphous Silica under High Pressure and High Temperature. Chinese Physics C, 2005, 29(S1): 116-119.
[16]	ZHAO Zhi-Ming , WANG Zhi-Guang , SONG Yin , JIN Yun-Fan , SUN You-Mei . FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation. Chinese Physics C, 2005, 29(8): 824-829.
[17]	QI Ze-Ming , ZHANG Guo-Bin , SHI Chao-Shu , LIU Bo , REN Guo-Hao , TAO Ye , XU Jian-Hua . High Efficiency Medical Scintillator Lu₂SiO₅:Ce Studied by VUV Spectra. Chinese Physics C, 2003, 27(S1): 32-34.
[18]	He Yuanjin , Xin Mingrui , Zhang Tianbao . Measurement of Characteristic Positron Annihilation Lifetime in HgCdTe. Chinese Physics C, 1994, 18(S3): 315-319.
[19]	Wang Shuying , Zhang Tianbao , Shentu Yanming , Wang Haidong , Yang Guangming . On the Nature of the Medium Lifetime Component of Positron Annihilation in a Teflon Polymer. Chinese Physics C, 1990, 14(S1): 11-18.
[20]	Chen Jiqiang , Long Qiwei , Zhou Jin , Wang Kelin . Atomic Density Distributions of Grain Boundaries in Metals and Lifetime Spectra Characteristics of Positron Annihilation. Chinese Physics C, 1989, 13(S4): 347-356.

Access

Get Citation

ZHANG Zhe, QIN Xiu-Bo, WANG Dan-Ni, YU Run-Sheng, WANG Qiao-Zhan, MA Yan-Yun and WANG Bao-Yi. Identification of pore size in porous SiO₂ thin film by positron annihilation[J]. Chinese Physics C, 2009, 33(2): 156-160. doi: 10.1088/1674-1137/33/2/015

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2008-05-12
Revised: 2008-06-05

Article Metric

Article Views(4068)
PDF Downloads(662)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, [email protected]

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Identification of pore size in porous SiO₂ thin film by positron annihilation

Corresponding author: WANG Bao-Yi,

Received Date: 2008-05-12

Accepted Date: 2008-06-05

Available Online: 2009-02-05

Abstract:

Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO₂ thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75:25 at.-% (Al75Si25) target with the radiofrequency (RF) power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the Al cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO₂ on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO₂ thin film is τ=7.80 ns. With these values of lifetime, RTE (Rectangular Pore Extension) model has been used to analyze the pore size.

HTML

Reference (1)

Identification of pore size in porous SiO₂ thin film by positron annihilation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, [email protected]

Email This Article

Identification of pore size in porous SiO₂ thin film by positron annihilation

Corresponding author: WANG Bao-Yi,

HTML

目录

Identification of pore size in porous SiO2 thin film by positron annihilation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, [email protected]

Email This Article

Identification of pore size in porous SiO2 thin film by positron annihilation

Corresponding author: WANG Bao-Yi,

HTML

目录

Identification of pore size in porous SiO₂ thin film by positron annihilation

Identification of pore size in porous SiO₂ thin film by positron annihilation